2N3906 Spec Sheet

2N3906 Spec Sheet - Microdot may be in either location). This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web pnp general purpose amplifier. Silicon epitaxial planar npn transistor. Web product specification transistor 2n3906 features pinning low current (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: 200 ma) low voltage (max.

Microdot may be in either location). Silicon epitaxial planar npn transistor. 200 ma) low voltage (max. Web product specification transistor 2n3906 features pinning low current (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma.

Web pnp general purpose amplifier. Microdot may be in either location). 200 ma) low voltage (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Silicon epitaxial planar npn transistor. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web product specification transistor 2n3906 features pinning low current (max.

2n3906 EcuRed

Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: 200 ma) low voltage (max. Web product specification transistor 2n3906 features pinning low current (max. This device is designed for general purpose amplifier and switching applications at collector.

2N3906 Datasheet PNP TRANSISTOR 60V, 200mA ST

This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web product specification transistor 2n3906 features pinning low current (max. Silicon epitaxial planar npn transistor. Microdot may be in either location). 200 ma) low voltage (max.

datasheet 2n3906 Transistor Electrical Engineering

Microdot may be in either location). Web pnp general purpose amplifier. Web product specification transistor 2n3906 features pinning low current (max. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Silicon epitaxial planar npn transistor.

Semiconductor 2N3906 (2N 3906) TRANSISTOR SILICON PNP / 40V / 0.2A/B

Microdot may be in either location). This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Web pnp.

2n3906 Datasheet PDF Transistor Bipolar Junction Transistor

Silicon epitaxial planar npn transistor. 200 ma) low voltage (max. Microdot may be in either location). Web product specification transistor 2n3906 features pinning low current (max. Web pnp general purpose amplifier.

Datasheet 2N3904

Web pnp general purpose amplifier. Web product specification transistor 2n3906 features pinning low current (max. 200 ma) low voltage (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: This device is designed for general purpose amplifier.

2N3906 datasheet(3/3 Pages) UTC GENERAL PURPOSE APPLIATION

Microdot may be in either location). Silicon epitaxial planar npn transistor. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma.

DC Components 2N3906 40V TO92 PNP Audio Transistor Rapid Online

This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Microdot may be in either location). Silicon epitaxial.

3332_3335_Spec Sheet_Jan74 3332 3335 Spec Sheet Jan74

This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web pnp general purpose amplifier. 200 ma) low voltage (max. Silicon epitaxial planar npn transistor. Microdot may be in either location).

2N3906 pdf, 2N3906 데이터시트, 2N3906 데이타시트

Silicon epitaxial planar npn transistor. Microdot may be in either location). This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web pnp general purpose amplifier. Web product specification transistor 2n3906 features pinning low current (max.

Microdot May Be In Either Location).

Web pnp general purpose amplifier. Silicon epitaxial planar npn transistor. Web product specification transistor 2n3906 features pinning low current (max. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma.